2SC3775 数据手册 - Sanyo Semiconductor（三洋）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 12V 集电极连续输出电流ICCollector Current(IC)| 100mA/0.1A 截止频率fTTranstion Frequency(fT)| 5GHz 直流电流增益hFEDC Current Gain(hFE)| 40~200 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 250mW/0.25W Description & Applications| NPN Epitaxial Planar Silicon Transistors Applications UHF low-noise amplifiers ,wide-band amplifiers Features Small noise figure High power gain High cutoff frequency 描述与应用| NPN平面外延硅晶体管 应用 UHF低噪声放大器，宽带放大器 特点 噪声系数小 高功率增益 高截止频率