2SC5295J-R 数据手册 - Panasonic（松下）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 15V

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●集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 10V

●集电极连续输出电流ICCollector Current(IC)| 65mA

●截止频率fTTranstion Frequency(fT)| 8.5Ghz

●直流电流增益hFEDC Current Gain(hFE)| 100~170

●管压降VCE（sat）Collector-Emitter Saturation Voltage|

●耗散功率PcPower Dissipation| 125mW/0.125W

●Description & Applications| Silicon NPN epitaxial planar type 2 GHz band low-noise amplification ■ Features • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

●描述与应用| NPN硅外延平面型  2 GHz频段低噪声放大 ■特点 •高转换频率fT •低集电极输出电容（通用基础，输入开路）COB •SS-迷你型包装，使瘦身的设备和 通过自动插入磁带包装