2SD1001 数据手册 - NEC（日本电气）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 80V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 80V 集电极连续输出电流ICCollector Current(IC)| 300mA/0.3A 截止频率fTTranstion Frequency(fT)| 140MHz 直流电流增益hFEDC Current Gain(hFE)| 200~400 管压降VCE（sat）Collector-Emitter Saturation Voltage| 150mV/0.15V 耗散功率PcPower Dissipation| 2W Description & Applications| Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features

● high collector to emitter voltage

● world standard miniature package 描述与应用| NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用， 特别是在混合集成电路  特点

●高集电极到发射极电压

●世界标准的微型封装