2SK1587 数据手册 - NEC（日本电气）

●最大源漏极电压Vds Drain-Source Voltage| 16V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 16V 最大漏极电流Id Drain Current| 2A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.3Ω/Ohm @1A,4V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.8-1.6V 耗散功率Pd Power Dissipation| 2W Description & Applications| N-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Has high voltage and high-speed switching characteristics 描述与应用| N沟道MOS FET的切换 直接被带有5V电源的IC驱动 不必考虑驱动电流，因为它的高输入阻抗 具有高电压和高速开关特性