2SK2091 数据手册 - Sanyo Semiconductor（三洋）

●最大源漏极电压VdsDrain-Source Voltage| 30v \---|--- 栅源极击穿电压V(BR)GSGate-Source Voltage| -30v 漏极电流(Vgs=0V)IDSSDrain Current| 0.4~0.8ma 关断电压Vgs(off)Gate-Source Cut-off Voltage| -0.3~-1.5v 耗散功率PdPower Dissipation| 150mW/0.15W Description & Applications| N-Channel Junction Silicon FET •impedance Converter Applications •Low-frequency general-purpose amplifier applications. •Impedance conversion. •Infrared sensor. 描述与应用| •N沟道结硅FET •阻抗转换器应用 •低频通用放大器应用。 •阻抗兑换。 •红外传感器。