BCR198T 数据手册 - Infineon（英飞凌）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -70mA 基极输入电阻R1 Input Resistance(R1)| 47KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 70 截止频率fT Transtion Frequency(fT)| 190MHz 耗散功率Pc Power Dissipation| 0.25W/250mW Description & Applications| Feature • PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1= 47kΩ , R2= 47kΩ) • For 6-PIN packages: two (galvanic) internalisolated transistors with good matching in one package 描述与应用| 特点 •PNP硅数字晶体管 •开关电路，逆变器，接口电路，驱动电路 •内置偏置电阻（R1=47KΩ，R2=47KΩ） •对于6-PIN封装：2（电流）的内部具有良好的匹配隔离晶体管在一个封装中