BFQ67W 数据手册 - VISHAY（威世）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 12V 集电极连续输出电流ICCollector Current(IC)| 50mA 截止频率fTTranstion Frequency(fT)| 7.5Ghz 直流电流增益hFEDC Current Gain(hFE)| 65~150 管压降VCE（sat）Collector-Emitter Saturation Voltage| 400mV/0.4V 耗散功率PcPower Dissipation| 200mW/0.2W Description & Applications| NPN Silicon Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. 描述与应用| NPN硅平面RF晶体管 特点  •小反馈电容  •低噪声系数  •高转换频率  • 无铅（Pb）组件  •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 低噪声小信号放大器高达2 GHz。这晶体管能在UHF，VHF和微波频率具有优越的噪声系数和相关增益性。