CXT2222A 数据手册 - Central Semiconductor

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 75V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 40V 集电极连续输出电流ICCollector Current(IC)| 600mA/0.6A 截止频率fTTranstion Frequency(fT)| 300MHz 直流电流增益hFEDC Current Gain(hFE)| 100~300 管压降VCE（sat）Collector-Emitter Saturation Voltage| 1V 耗散功率PcPower Dissipation| 1.2W Description & Applications| SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,designed for general purpose amplifier and switching applications. 描述与应用| 表面贴装 NPN硅晶体管 该中央半导体CZT2222A的类型是NPN硅晶体管 由外延平面工艺，环氧树脂模压在一个表面贴装封装，为通用放大器和开关应用而设计制造。