CXT5401 数据手册 - Central Semiconductor

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| -160V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| −150V 集电极连续输出电流ICCollector Current(IC)| −500mA/-0.5A 截止频率fTTranstion Frequency(fT)| 100~300MHz 直流电流增益hFEDC Current Gain(hFE)| 60~240 管压降VCE（sat）Collector-Emitter SaturationVoltage| −500mV/-0.5V 耗散功率PcPoWer Dissipation| 1.2W Description & Applications| SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. 描述与应用| 表面贴装PNP硅晶体管 产品描述： 中央半导体CXT5401型的PNP硅晶体管所生产外延平面工艺，在一个表面贴装封装，高电压放大器应用设计的环氧模。