CZT3019 数据手册 - Central Semiconductor

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 120V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 80V 集电极连续输出电流ICCollector Current(IC)| 1A 截止频率fTTranstion Frequency(fT)| 100MHz 直流电流增益hFEDC Current Gain(hFE)| 100~300 管压降VCE（sat）Collector-Emitter Saturation Voltage| 500mV/0.5V 耗散功率PcPower Dissipation| 2W Description & Applications| NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. 描述与应用| NPN硅晶体管 中央半导体CZT3019类型是NPN硅晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，为高电流的通用放大器应用设计制造。