DTC314TK 数据手册 - ROHM Semiconductor（罗姆半导体）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 30V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 15V 集电极连续输出电流IC Collector Current(IC)| 600mA/0.6A 基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 电阻比(R1/R2) Resistance Ratio| 直流电流增益hFE DC Current Gain(hFE)| 150 截止频率fT Transtion Frequency(fT)| 200MHz 耗散功率Pc Power Dissipation| 0.2W/200mW Description & Applications| Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy 4) Low saturation voltage, typically Vce(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. 5) These transistors can be used at high current levels, IC=600mA 描述与应用| 特性 1）内置启用偏置电阻器的逆变器电路无需连接外部输入电阻配置 2）偏置电阻组成的薄膜电阻完全隔离，允许负偏置输入。他们也有优势，几乎完全消除了寄生效应。 3）只有开/关条件需要设置操作，使装置的设计容易 4）低饱和电压，通常Vce（sat）=40mV@IC / IB=50mA/2.5mA，使得这些晶体管的理想选择静音电路。 5）这些晶体管可用于高电流水平，IC=600毫安