EMF23 数据手册 - ROHM Semiconductor（罗姆半导体）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 | -60V/50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V 集电极连续输出电流IC Collector Current(IC) Q1/Q2 | -150mA/100mA Q1基极输入电阻R1 Input Resistance(R1) | Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Q1电阻比(R1/R2) Q1 Resistance Ratio | Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 直流电流增益hFE DC Current Gain(hFE) Q1 | 180~390 截止频率fT Transtion Frequency(fT) | 140MHz/250MHz 耗散功率Pc Power Dissipation | 150mW/0.15W Description & Applications | Features •Power management (dual transistors) •2SA1774and DTC114E are housed independently in a EMT6 or UMT6 package. . •Power switching circuit in a single package. •Mounting cost and area can be cut in half. 描述与应用 | 特点 •电源管理（双晶体管） •2SA1774and DTC114E被安置独立在EMT6 UMT6包装 •电源开关电路，在单一封装中。 •安装成本和面积可减少一半