EMG8 数据手册 - ROHM Semiconductor（罗姆半导体）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 | 50V/50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V/50V 集电极连续输出电流IC Collector Current(IC) Q1/Q2 | 100mA/100MA Q1基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.1 Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.1 直流电流增益hFE DC Current Gain(hFE)Q1/Q2 | 截止频率fT Transtion Frequency(fT) Q1/Q2 | 250MHz/250MHZ 耗散功率Pc Power Dissipation Q1/Q2 | 150mW/0.15W Description & Applications | Features •Emitter common (dual digital transistors) •Two DTC143Z chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half 描述与应用 | Features •Emitter common (dual digital transistors) •Two DTC143Z chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half