●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 40V/-10V
●\---|---
●集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V/-50V
●集电极连续输出电流IC Collector Current(IC)| 30mA/-30mA
●Q1基极输入电阻R1 Input Resistance(R1)| 22KΩ/Ohm
●Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 22KΩ/Ohm
●Q1电阻比(R1/R2) Q1 Resistance Ratio| 1
●Q2基极输入电阻R1 Input Resistance(R1)| 22KΩ/Ohm
●Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 22KΩ/Ohm
●Q2电阻比(R1/R2) Q2 Resistance Ratio| 1
●直流电流增益hFE DC Current Gain(hFE)|
●截止频率fT Transtion Frequency(fT)| 250MHz
●耗散功率Pc Power Dissipation| 300mW/0.3W
●Description & Applications| Features •Power management(dual digital transistors) •includes a DTA124E and DTC114E transistor in a EMT or UMT or SMT package. •Ideal for power switch circuits. •Mounting cost and area can be cut in half
●描述与应用| 特点 •电源管理（双数字晶体管） •包括DTA124E DTC114E在EMT或UMT或SMT封装的晶体管。 •电源开关电路的理想选择。 •安装成本和面积可减少一半
