FMG11A 数据手册 - ROHM Semiconductor（罗姆半导体）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V

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●集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V

●集电极连续输出电流IC Collector Current(IC)| 100mA

●Q1基极输入电阻R1 Input Resistance(R1)| 2.2KΩ/Ohm

●Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm

●Q1电阻比(R1/R2) Q1 Resistance Ratio| 0.047

●Q2基极输入电阻R1 Input Resistance(R1)| 2.2KΩ/Ohm

●Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm

●Q2电阻比(R1/R2) Q2 Resistance Ratio| 0.047

●直流电流增益hFE DC Current Gain(hFE)|

●截止频率fT Transtion Frequency(fT)| 250MHz

●耗散功率Pc Power Dissipation| 300mW/0.3W

●Description & Applications| Features •Emitter common(dual digital transistors) •Two DTA123Js chips in a EMT or UMT or SMT package.

●描述与应用| 特点 •发射极普通的（双数字晶体管） •两个DTA123Js的在EMT或UMT或SMT封装的芯片