HR1A3M 数据手册 - NEC（日本电气）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -60V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -60V 集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A 基极输入电阻R1 Input Resistance(R1)| 1KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 1KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 100 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| 2.0W Description & Applications| FEATURES •COMPOUND TRANSISTOR •on-chip resistor PNP silicon epitaxial transistor For mid-speed switching •Up to 2A high current drives such as ICs, motors, and solenoids available •On-chip bias resistor •Low power consumption during drive 描述与应用| 特点 •复合晶体管 •片上电阻晶体管PNP硅外延中速切换 •高达2A大电流驱动器，如集成电路，电动机和螺线管 •片上偏置电阻 •低功耗，在驱动器