HSMS-2802 数据手册 - Agilent（安捷伦）

●反向电压VrReverse Voltage| 70V \---|--- 平均整流电流IoAVerage Rectified Current| 15mA 最大正向压降VFForward Voltage(Vf) | 410mV/0.41V 最大耗散功率PdPower dissipation| Description & Applications| • High Breakdown Voltage • Low FIT (Failure in Time)Rate

● • Six-sigma Quality Level • These Schottky diodes are specifically designed for both analog and digital applications. • Surface Mount RF Schottky Barrier Diodes • Schottky Barrier Diodes in Series 描述与应用| •高击穿电压 •低FIT（故障时间）率

● •这些肖特基二极管是专门设计用于模拟和数字应用。 •表面贴装射频肖特基二极管 •串联的肖特基二极管