HSMS-282B-TR1 数据手册 - Agilent（安捷伦）

●反向电压VrReverse Voltage| 15V \---|--- 平均整流电流IoAVerage Rectified Current| 10mA 最大正向压降VFForward Voltage(Vf) | 340mV/0.34V 最大耗散功率PdPower dissipation| Description & Applications| • Low FIT (Failure in Time) Rate

● • HSMS-282K Grounded Center Leads Provide up to 10 dB Higher Isolation • Matched Diodes for Consistent Performance • Better Thermal Conductivity for Higher Power Dissipation • These Schottky diodes are specifically designed for both analog and digital applications。 • HSMS-282x series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. • Surface Mount RF Schottky Barrier Diodes 描述与应用| •低FIT（故障时间）率

● •HSMS-282K接地中心信息提供多达高出10 dB的隔离 •一致的性能匹配二极管 •更好的导热性更高的功率耗散 •这些肖特基二极管是专门设计用于模拟和数字应用。 •二极管HSMS-282X系列全能是最好的选择，对于大多数应用，具有低串联电阻，在目前所有级别的低正向电压和良好的RF的特点。 •表面贴装射频肖特基二极管