HSMS-2852 数据手册 - Agilent（安捷伦）

●反向电压VrReverse Voltage | \---|--- 平均整流电流IoAVerage Rectified Current | 1mA 最大正向压降VFForward Voltage(Vf) | 250mV/0.25V 最大耗散功率PdPower dissipation | Description & Applications | Surface Mount Zero Bias Schottky Detector Diodes • High Detection Sensitivity: up to 50 mV/μW at 915 MHz • Low Flicker Noise:-162 dBV/Hz at 100 Hz • Low FIT (Failure in Time)Rate

● • Tape and Reel Options • Matched Diodes for Consistent Performance • Better ThermalConductivity for Higher Power Dissipation • Agilent"s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal (Pin <-20 dBm) applications at frequencies below 1.5 GHz. Theyare ideal for RF/ID and RF Tag applications where primary (DC bias) power is not availabl 描述与应用 | 表面贴装零偏置肖特基检波二极管 •检测灵敏度高：到50 mV/μW在915 MHz •低噪音闪烁：-162 DBV/频率为100Hz •低FIT（故障时间）率

● •磁带和卷轴选项 •一致的性能匹配二极管 •更好的导热系数更高的功率耗散 •安捷伦的零偏置肖特基检波二极管HSMS-285X系列的设计和优化，在小信号（引脚<-20 dBm的）应用，使用频率1.5 GHz以下。他们是理想的RF/ ID和射频。