KRA307 数据手册 - KEC(Korea Electronics)（KEC株式会社）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A 基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 0.21 直流电流增益hFE DC Current Gain(hFE)| 截止频率fT Transtion Frequency(fT)| 200MHz 耗散功率Pc Power Dissipation| 0.1W/100mW Description & Applications| FEATURES •with built-in bias RESISTOR •simplify circuit design •reduce a quantity of parts and manufacturing process •high packing density 描述与应用| 特点 •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •高堆积密度