MA785 数据手册 - Panasonic（松下）

●反向电压VrReverse Voltage| 50V

●\---|---

●平均整流电流IoAVerage Rectified Current| 100mA/0.1A

●最大正向压降VFForward Voltage(Vf) | 550mV/0.55V

●最大耗散功率PdPower dissipation|

●Description & Applications| • Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For super-high speed switching circuit • For small current rectification • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed

●描述与应用| •肖特基势垒二极管（SBD） •硅外延平面型 •超高速开关电路 •小电流整流 •最佳高频整流，因为其反向恢复时间短（TRR） •低VF（正向电压上升），整流效率高 •反向电压VR（DC值）=50 V保证