MMBT3906-7-F 数据手册 - Diodes（美台）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| -40V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| −40V 集电极连续输出电流ICCollector Current(IC)| −200mA/-0.2A 截止频率fTTranstion Frequency(fT)| 250MHz 直流电流增益hFEDC Current Gain(hFE)| 100~300 管压降VCE（sat）Collector-Emitter SaturationVoltage| -400mV/-0.4V 耗散功率PcPoWer Dissipation| 300mW/0.3W Description & Applications| PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR FEATURES Epitaxial Planar Die Construction Complementary to MMBT3904 Ideal for Medium Power Amplification and Switching 描述与应用| PNP小信号表面贴装晶体管 特点 外延平面电路小片建设 互补型MMBT3904 非常适于中等功率放大和开关