MMUN2114LT1 数据手册 - ON Semiconductor（安森美）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A 基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 0.21 直流电流增益hFE DC Current Gain(hFE)| 140 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| 0.4W/400mW Description & Applications| FEATURES •bias resistor transistors •PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. •Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel 描述与应用| 特点 •偏置电阻晶体管 •PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数量SOT-23封装，可以使用波或回流焊接。该改性鸥翅引线在焊接热应力吸收消除电路小片损坏的可能性。 •可在8 mm压纹带和卷轴。使用设备号到责令7 inch/3000的单位卷轴。替换“T1”与“T3”设备编号责令13 inch/10的000个单位卷轴