MUN2116T1 数据手册 - ON Semiconductor（安森美）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A 基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 电阻比(R1/R2) Resistance Ratio| 直流电流增益hFE DC Current Gain(hFE)| 250 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| 0.338W/338mW Description & Applications| FEATURES •bias resistor transistors •PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Moisture Sensitivity Level: 1 •ESD Rating − Human Body Model: Class 1− Machine Model: Class B •The SC−59 Package Can be Soldered Using Wave or Reflow •The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die •Pb−Free Packages are Available 描述与应用| 特点 •偏置电阻晶体管 •PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数量 •湿度敏感度等级：1 •ESD额定值 - 人体模型：第1类- 机器型号：B类 •SC-59包装可以焊接使用波或回流 •改进的鸥翼信息过程中吸收热应力消除焊接模具损坏的可能性 •无铅包可用