PDTA144VT 数据手册 - NXP（恩智浦）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A 基极输入电阻R1 Input Resistance(R1)| 47KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 4.7 直流电流增益hFE DC Current Gain(hFE)| 40 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| 0.25W/250mW Description & Applications| FEATURES • PNP resistor-equipped transistors • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. 描述与应用| 特点 •PNP电阻配备晶体管 •内置偏置电阻 •简化电路设计 •减少元件数量 •减少取放成本。 应用 •通用开关和放大 •逆变器和接口电路 •电路驱动。