PZT2222A 数据手册 - ON Semiconductor（安森美）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 75V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V 集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A 截止频率fTTranstion Frequency(fT) | 300MHz 直流电流增益hFEDC Current Gain(hFE) | 300 管压降VCE（sat）Collector-Emitter Saturation Voltage | 0.3V~1V 耗散功率PcPower Dissipation | 1.5W Description & Applications | NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. 描述与应用 | NPN硅平面 外延型晶体管 这NPN硅外延晶体管设计用于线性 和开关应用。该设备是设中的采用SOT-223封装 包是专为中等功率表面贴装 的应用程序。