RN1101MFV 数据手册 - Toshiba（东芝）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A 基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm 电阻比(R1/R2) Resistance Ratio | 1 直流电流增益hFE DC Current Gain(hFE) | 30 截止频率fT Transtion Frequency(fT) | 耗散功率Pc Power Dissipation | 0.15W/150mW Description & Applications | Features Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2101MFV 描述与应用 | 特性 开关，逆变电路，接口电路和驱动器电路应用 适合非常高密度安装超小型封装， 结合到晶体管偏置电阻器减少部件的数量，所以能够制造比更紧凑设备并降低装配成本。 宽范围的电阻值是可用于在各种电路。 对管是RN2101MFV