RN2102FS 数据手册 - Toshiba（东芝）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -20V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -20V 集电极连续输出电流IC Collector Current(IC)| -50mA 基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 60 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| 0.05W/50mW Description & Applications| Features •Transistor Silicon PNP Epitaxial Type (PCT Process) •Bias Resistor built-in Transistor •Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. •Complementary to RN1101FS~RN1106FS Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •晶体管的硅PNP外延型（PCT工艺） •内置偏置电阻晶体管 •将偏置电阻晶体管，减少了部件数量。减少零件数，使制造更加紧凑的设备和节省组装成本。 •互补RN1101FS的〜RN1106FS 应用 •开关，逆变电路，接口电路和驱动器电路应用