RN2107ACT 数据手册 - Toshiba（东芝）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -80mA 基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 0.213 直流电流增益hFE DC Current Gain(hFE)| 80 截止频率fT Transtion Frequency(fT)| 200MHz 耗散功率Pc Power Dissipation| 0.1W/100mW Description & Applications| Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • Extra small package (CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN1107ACT to RN1109ACT Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •晶体管的硅PNP外延型（PCT工艺） •超小型封装（CST3）是适用于额外的高密度制造。 •将偏置电阻晶体管，减少了部件数量。 •减少零件计数使能更加紧凑的设备制造和节省组装成本。 •互补RN1107ACT的到RN1109ACT 应用 •开关，逆变电路，接口电路和驱动器电路应用