SI3831DV 数据手册 - VISHAY（威世）

●最大源漏极电压VdsDrain-Source Voltage| -7V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| -7V 最大漏极电流IdDrain Current| -2.4A 源漏极导通电阻RdsDrain-Source On-State Resistance| 240mΩ@ VGS = -2.5V, ID = -2A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4V 耗散功率PdPower Dissipation| 1.5W Description & Applications| Bi-Directional P-Channel MOSFET/Battery Switch Feature Low rSS(on) Symmetrical P-Channel MOSFET Rated for 2.5- to 12-V Operation Symmetrical 12-V Blocking (off) Voltage Solution for High-Side Battery Disconnect Switching (BDS) Supports Multiple Battery Applications Low Profile, Small Footprint TSOP-6 Package 描述与应用| 双向P沟道MOSFET/电池开关 特点 低RSS（上）对称的P沟道MOSFET 额定为2.5-12-V操作？ 12-V对称封锁（关闭）电压 解决高侧电池断开开关（BDS） 支持多种电池应用 薄型，占地面积小TSOP-6封装