TF202FC-4-TL-H 数据手册 - Sanyo Semiconductor（三洋）

●最大源漏极电压VdsDrain-Source Voltage| 20v \---|--- 栅源极击穿电压V(BR)GSGate-Source Voltage| -20v 漏极电流(Vgs=0V)IDSSDrain Current| 0.14~0.24ma 关断电压Vgs(off)Gate-Source Cut-off Voltage| -0.2~-1v 耗散功率PdPower Dissipation| 100mW/0.1W Description & Applications| N-channel Junction FET Features • Especially suited for use in electret condenser microphone. • Ultrasmall package permitting TF202 applied sets to be made small and slim. • Excellent voltage characteristics. • Excellent transient characteristics. • Adoption of FBET process. 描述与应用| N沟道结型场效应管 特点 •尤其适用于使用电容式驻极体 麦克风。 •超小包装允许TF202 应用设置作出小巧玲珑。 •优秀的电压特性。 •出色的瞬态特性。 •通过过程FBET。