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Datasheet 搜索 > IGBT晶体管 > Infineon(英飞凌) > IKB15N60T 数据手册 > IKB15N60T 开发手册 1/48 页
IKB15N60T
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IKB15N60T 数据手册

Infineon(英飞凌)
14 页 / 0.79 MByte
Infineon(英飞凌)
270 页 / 11.59 MByte
Infineon(英飞凌)
73 页 / 2.93 MByte
Infineon(英飞凌)
48 页 / 2 MByte

IKB15N60 数据手册

Infineon(英飞凌)
IGBT的沟槽场终止和技术,柔软,快速恢复反并联EMCON何二极管 IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Infineon(英飞凌)
IGBT 晶体管 Infineon"s TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
Infineon(英飞凌)
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