SST309 数据手册 - VISHAY（威世）

●最大源漏极电压VdsDrain-Source Voltage| 25v \---|--- 栅源极击穿电压V(BR)GSGate-Source Voltage| -25v 漏极电流(Vgs=0V)IDSSDrain Current| 12~30ma 关断电压Vgs(off)Gate-Source Cut-off Voltage| -1~-4v 耗散功率PdPower Dissipation| 350mW/0.35W Description & Applications| •N–Channel JFETs •Excellent High Frequency Gain:Gps 11.5 dB @ 450 MHz •Very Low Noise: 2.7 dB @ 450 MHz •Very Low Distortion •High ac/dc Switch Off-Isolation 描述与应用| •N沟道JFETs •优秀的高频增益：GPS11.5分贝@450兆赫 •非常低噪声：2.7分贝@450兆赫 •非常低的失真 •高AC / DC开关关断隔离