UN9210J 数据手册 - Panasonic（松下）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA/0.1A 基极输入电阻R1 Input Resistance(R1)| 47KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 电阻比(R1/R2) Resistance Ratio| 直流电流增益hFE DC Current Gain(hFE)| 35 截止频率fT Transtion Frequency(fT)| 150MHz 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| Silicon NPN epitaxial planer transistr For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 描述与应用| NPN硅外延平面晶体管的 用于数字电路 特性 成本可降低通过减员设备和 减少部件的数量。 迷你型包装，使瘦身的设备和 通过自动插入磁带包装盒包装